Mohamed Henini obtained his first degree at the University of Oran, Algeria. He went to Nottingham University, UK, and was awarded the PhD degree in 1984. Henini has been studying various aspects of low dimensional semiconductor structures and devices grown by Molecular Beam Epitaxy (MBE) for over 25 years. During this time a significant contribution to the understanding of the physics underlying the operation of such structures and devices has been made. The research work has been recognized nationally and internationally. He has an established reputation and as a result collaborate/collaborated with many scientists both in the UK and overseas as evidenced by his publications. He has authored and co-authored over 970 papers in international journals and conference proceedings. Some measure of the influence and impact of Prof Henini’s work may be drawn from citation statistics [Institute for Scientific Information (ISI)]. He has a h-index of 53 (ISI Web of Science). He edited/co-edited six books in the field of semiconductors and nanoscience which were published by Elsevier and serves on the Editorial Board of several scientific journals. He is Editor of Journal of Alloys and Compounds (Elsevier). He is member of several National and International Professional Organisations including UNESCO-Africa Chair in Nanosciences & Nanotechnology, Nanosciences African-Network Initiative (NANOAFNET), and African Network for Solar Energy (ANSOLE). He has a strong track record in organising conferences and workshops, and he is the founder of two international conferences namely, Low Dimensional Structures and Devices (LDSD) and Epitaxial Semiconductors on Patterned Substrates and Novel Index Surfaces (ESPS-NIS). http://www.nottingham.ac.uk/~ppzmh/mywebsite/
